hzs series silicon epitaxial planar zener diodes for stabilized power supply features ? low leakage, low zener impedance and maximum power dissipation of 500 mw are ideally suited for stabilized power supply, etc. ? wide spectrum from 1.6 v through 38 v of zener voltage provide flexible application. absolute maximum ratings (t a = 25 ) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 200 storage temperature range t stg - 55 to + 175 characteristics at t a = 25 (v f = 1 v max. at i f = 100 ma) type zener voltage 1) reverse leakage current dynamic resistance v zt at i zt i r at v r z zt at i zt min. (v) max. (v) (ma) max. (a) (v) max. ( ? ) (ma) hzs2b1 1.9 2.1 5 5 0.5 100 5 hzs2b2 2 2.2 5 5 0.5 100 5 hzs2b3 2.1 2.3 5 5 0.5 100 5 hzs2c1 2.2 2.4 5 5 0.5 100 5 hzs2c2 2.3 2.5 5 5 0.5 100 5 hzs2c3 2.4 2.6 5 5 0.5 100 5 hzs3a1 2.5 2.7 5 5 0.5 100 5 hzs3a2 2.6 2.8 5 5 0.5 100 5 hzs3a3 2.7 2.9 5 5 0.5 100 5 hzs3b1 2.8 3 5 5 0.5 100 5 hzs3b2 2.9 3.1 5 5 0.5 100 5 hzs3b3 3 3.2 5 5 0.5 100 5 hzs3c1 3.1 3.3 5 5 0.5 100 5 hzs3c2 3.2 3.4 5 5 0.5 100 5 hzs3c3 3.3 3.5 5 5 0.5 100 5 hzs4a1 3.4 3.6 5 5 1 100 5 hzs4a2 3.5 3.7 5 5 1 100 5 hzs4a3 3.6 3.8 5 5 1 100 5 hzs4b1 3.7 3.9 5 5 1 100 5 max. 2.9 max. 1.9 glass case do-34 max. 0.45 min. 27.5 min. 27.5 xxx cathode band part no. dimensions in mm black black 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 (v f = 1 v max. at i f = 100 ma) type zener voltage 1) reverse leakage current dynamic resistance v zt at i zt i r at v r z zt at i zt min. (v) max. (v) (ma) max. (a) (v) max. ( ? ) (ma) hzs4b2 3.8 4 5 5 1 100 5 hzs4b3 3.9 4.1 5 5 1 100 5 hzs4c1 4 4.2 5 5 1 100 5 hzs4c2 4.1 4.3 5 5 1 100 5 hzs4c3 4.2 4.4 5 5 1 100 5 hzs5a1 4.3 4.5 5 5 1.5 100 5 hzs5a2 4.4 4.6 5 5 1.5 100 5 hzs5a3 4.5 4.7 5 5 1.5 100 5 hzs5b1 4.6 4.8 5 5 1.5 100 5 hzs5b2 4.7 4.9 5 5 1.5 100 5 hzs5b3 4.8 5 5 5 1.5 100 5 hzs5c1 4.9 5.1 5 5 1.5 100 5 hzs5c2 5 5.2 5 5 1.5 100 5 hzs5c3 5.1 5.3 5 5 1.5 100 5 hzs6a1 5.2 5.5 5 5 2 40 5 hzs6a2 5.3 5.6 5 5 2 40 5 hzs6a3 5.4 5.7 5 5 2 40 5 hzs6b1 5.5 5.8 5 5 2 40 5 hzs6b2 5.6 5.9 5 5 2 40 5 hzs6b3 5.7 6 5 5 2 40 5 hzs6c1 5.8 6.1 5 5 2 40 5 hzs6c2 6 6.3 5 5 2 40 5 hzs6c3 6.1 6.4 5 5 2 40 5 HZS7A1 6.3 6.6 5 1 3.5 15 5 hzs7a2 6.4 6.7 5 1 3.5 15 5 hzs7a3 6.6 6.9 5 1 3.5 15 5 hzs7b1 6.7 7 5 1 3.5 15 5 hzs7b2 6.9 7.2 5 1 3.5 15 5 hzs7b3 7 7.3 5 1 3.5 15 5 hzs7c1 7.2 7.6 5 1 3.5 15 5 hzs7c2 7.3 7.7 5 1 3.5 15 5 hzs7c3 7.5 7.9 5 1 3.5 15 5 hzs9a1 7.7 8.1 5 1 5 20 5 hzs9a2 7.9 8.3 5 1 5 20 5 hzs9a3 8.1 8.5 5 1 5 20 5 hzs9b1 8.3 8.7 5 1 5 20 5 hzs9b2 8.5 8.9 5 1 5 20 5 hzs9b3 8.7 9.1 5 1 5 20 5 hzs9c1 8.9 9.3 5 1 5 20 5 hzs9c2 9.1 9.5 5 1 5 20 5 hzs9c3 9.3 9.7 5 1 5 20 5 hzs11a1 9.5 9.9 5 1 7.5 25 5 hzs11a2 9.7 10.1 5 1 7.5 25 5 hzs11a3 9.9 10.3 5 1 7.5 25 5 hzs11b1 10.2 10.6 5 1 7.5 25 5 hzs series silicon epitaxial planar zener diodes 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
characteristics at t a = 25 (v f = 1 v max. at i f = 100 ma) type zener voltage 1) reverse leakage current dynamic resistance v zt at i zt i r at v r z zt at i zt min. (v) max. (v) (ma) max. (a) (v) max. ( ? ) (ma) hzs11b2 10.4 10.8 5 1 7.5 25 5 hzs11b3 10.7 11.1 5 1 7.5 25 5 hzs11c1 10.9 11.3 5 1 7.5 25 5 hzs11c2 11.1 11.6 5 1 7.5 25 5 hzs11c3 11.4 11.9 5 1 7.5 25 5 hzs12a1 11.6 12.1 5 1 9.5 35 5 hzs12a2 11.9 12.4 5 1 9.5 35 5 hzs12a3 12.2 12.7 5 1 9.5 35 5 hzs12b1 12.4 12.9 5 1 9.5 35 5 hzs12b2 12.6 13.1 5 1 9.5 35 5 hzs12b3 12.9 13.4 5 1 9.5 35 5 hzs12c1 13.2 13.7 5 1 9.5 35 5 hzs12c2 13.5 14 5 1 9.5 35 5 hzs12c3 13.8 14.3 5 1 9.5 35 5 hzs151 14.1 14.7 5 1 11 40 5 hzs152 14.5 15.1 5 1 11 40 5 hzs153 14.9 15.5 5 1 11 40 5 hzs161 15.3 15.9 5 1 12 45 5 hzs162 15.7 16.5 5 1 12 45 5 hzs163 16.3 17.1 5 1 12 45 5 hzs181 16.9 17.7 5 1 13 55 5 hzs182 17.5 18.3 5 1 13 55 5 hzs183 18.1 19 5 1 13 55 5 hzs201 18.8 19.7 2 1 15 60 2 hzs202 19.5 20.4 2 1 15 60 2 hzs203 20.2 21.1 2 1 15 60 2 hzs221 20.9 21.9 2 1 17 65 2 hzs222 21.6 22.6 2 1 17 65 2 hzs223 22.3 23.3 2 1 17 65 2 hzs241 22.9 24 2 1 19 70 2 hzs242 23.6 24.7 2 1 19 70 2 hzs243 24.3 25.5 2 1 19 70 2 hzs271 25.2 26.6 2 1 21 80 2 hzs272 26.2 27.6 2 1 21 80 2 hzs273 27.2 28.6 2 1 21 80 2 hzs301 28.2 29.6 2 1 23 100 2 hzs302 29.2 30.6 2 1 23 100 2 hzs303 30.2 31.6 2 1 23 100 2 hzs331 31.2 32.6 2 1 25 120 2 hzs332 32.2 33.6 2 1 25 120 2 hzs333 33.2 34.6 2 1 25 120 2 hzs361 34.2 35.7 2 1 27 140 2 hzs362 35.3 36.8 2 1 27 140 2 hzs363 36.4 38 2 1 27 140 2 1) tested with pulses tp = 20 ms. hzs series silicon epitaxial planar zener diodes 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
0 10 -8 10 z e n e r c u r r e n t i z ( a ) 10 -7 -6 10 10 -4 -5 10 -3 10 -2 zener voltage vz (v) 51015 20 25 30 35 40 fig.1- zener current versus zener voltage h z s 4 b 2 h z s 6 b 2 h z s 9 b 2 h z s 1 2 b 2 h z s 1 6 - 2 h z s 2 0 - 2 h z s 3 0 - 2 h z s 3 6 - 2 h z s 2 b 2 h z s 2 4 - 2 ambient temperature: ta ( c) o 0 25 100 150 0 100 200 300 power dissipation: ptot (mw) 400 500 200 power derating curve hzs series silicon epitaxial planar zener diodes 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
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